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| MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. O U TLIN E 2 4 + /- 0 .3 u nit : m m 2M IN FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1 ) R 1 .2 0 .6 + /- 0 .1 5 17.4 +/- 0.2 8.0 +/- 0.2 (2 ) 2M IN (3 ) 2 0 .4 + /- 0 .2 0.1 +/- 0.05 APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital radio communication 4.3 +/- 0.4 1 6 .7 QUALITY GRADE IG VDS = 10 (V) ID = 8 (A) RG=25 (ohm) 1.4 RECOMMENDED BIAS CONDITIONS G F-38 (Ta=25deg.C) (1 ) ga te (2 ) sou rce (fla ng e ) (3 )dra in ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature < Keep safety first in your circuit designs! > Ratings -15 -15 25 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA Min. -2 44 VDS=10V, ID(RF off)=8A, f=3.4 - 3.6GHz 11 -42 delta Vf method Limits Typ. 24 8 45 12 8 36 -45 0.8 Unit Max. -5 1 A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.4,3.5,3.6GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC Oct-'03 2.4 +/- 0.2 MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 47 46 OUTPUT POWER P1dB (dBm) 45 44 GLP Po, P.A.E. vs. Pin 16 46 44 LINEAR POWER GAIN GLP (dB) 100 POWER ADDED EFFICIENCY (%) VDS=10V IDS=8A f=3.5GHz VDS=10V IDS=8.0A 15 P1dB 42 OUTPUT POWER Po (dBm) 40 38 36 34 32 30 80 14 13 12 11 10 Po 60 43 42 41 40 3.3 3.4 3.5 FREQUENCY f (GHz) Po,IM3 vs. f 42 40 VDS=10V IDS=8A f1=3.600GHz f2=3.605GHz 2-tone test 40 P.A.E. 20 28 9 3.6 3.7 26 17 19 21 23 25 27 29 31 33 35 37 INPUT POWER Pin (dBm) 0 20 10 0 OUTPUT POWER Po (dBm S.C.L.) 38 36 34 32 30 Po -10 -20 -30 -40 IM3 (dBc) IM3 28 26 24 16 18 20 22 24 26 28 30 INPUT POWER Pin (dBm S.C.L.) -50 -60 -70 S parameters f (GHz) 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 3.81 49 0.05 -14 3.77 36 0.05 -29 3.70 20 0.05 -45 3.62 7 0.05 -60 3.57 -3 0.05 -71 3.55 -18 0.05 -82 3.53 -29 0.06 -99 3.50 -40 0.06 -109 3.56 -55 0.06 -124 S22 Angle(deg) -29 -41 -52 -64 -78 -93 -106 -122 -133 S11 Magn. Angle(deg) 0.45 137 0.51 119 0.56 104 0.59 91 0.61 81 0.62 70 0.62 59 0.61 51 0.58 38 Magn. 0.44 0.41 0.38 0.34 0.33 0.33 0.32 0.32 0.32 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC |
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